IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:33 Issue:5 Help

Temperature Dependences of I – V Characteristics of SD and LDD Poly-Si TFTs

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Kimura, M. ; Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan ; Taya, J. ; Nakashima, A.

We have compared the temperature dependences of the current-voltage characteristics between single drain (SD) and lightly doped drain (LDD) poly-Si thin-film transistors (TFTs). It is found that the temperature dependence of the off-leakage current for the LDD TFT is larger because the electric field at the drain junction is weaker. Moreover, the change of the temperature dependence from low drain voltage (Vds) to high Vds for the LDD TFT is smaller because the main mechanism of the off-leakage current is always phonon-assisted tunneling (PAT), whereas that for the SD TFT shifts from PAT to band-to-band tunneling.

Published in:
Electron Device Letters, IEEE  (Volume:33 ,  Issue: 5 )

Date of Publication: May 2012

Page(s):
682 - 684
ISSN :
0741-3106
INSPEC Accession Number:
12692179
Digital Object Identifier :
10.1109/LED.2012.2188267
Product Type:
Journals & Magazines
Date of Publication :
22 March 2012
Date of Current Version :
20 April 2012
Issue Date :
May 2012
Sponsored by :
IEEE Electron Devices Society

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.