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Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling

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4 Author(s)
Makarov, A. ; Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria ; Sverdlov, V. ; Osintsev, D. ; Selberherr, S.

Spin transfer torque random access memory is one of the promising candidates for future universal memory. The reduction of the current density required for switching and the increase of the switching speed are the most important challenges in this area. In this paper, a penta-layer structure with two pinned magnetic layers is studied by means of extensive micromagnetic calculations. By numerically investigating the dynamics of the switching process, a methodology of how to achieve fast and symmetric switching without a compensating magnetic field is presented. Our simulations also highlight the importance of the field acting perpendicular to the plane, which facilitates switching.

Published in:

Magnetics, IEEE Transactions on  (Volume:48 ,  Issue: 4 )