By Topic

High-Q (>5000) AlN nanobeam photonic crystal cavity embedding GaN quantum dots

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Sergent, S. ; Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan ; Arita, M. ; Kako, S. ; Iwamoto, S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3695331 

We report on the fabrication and optical characterization of high-quality-factor AlN one-dimensional nanobeam photonic crystal cavities embedding GaN quantum dots and operating in the ultra-violet range. By means of electron-beam lithography, dry etching and photoelectrochemical etching, we implement a high-frequency nanobeam cavity design in an AlN epilayer containing GaN quantum dots. Room-temperature microphotoluminescence characterization of the fabricated nanobeams exhibits resonances with wavelengths as short as 320 nm and quality factors as high as Qexp = 5.0 × 103 at 380 nm. This constitutes a significant improvement over previously reported group-III nitride photonic crystal cavities in terms of operating wavelength.

Published in:

Applied Physics Letters  (Volume:100 ,  Issue: 12 )