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ZnO-Based n-Channel Junction Field-Effect Transistor With Room-Temperature-Fabricated Amorphous p-Type \hbox {ZnCo}_{2}\hbox {O}_{4} Gate

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4 Author(s)
Schein, F. ; Fak. fur Phys. und Geowissenschaften, Univ. Leipzig, Leipzig, Germany ; von Wenckstern, Holger ; Frenzel, H. ; Grundmann, Marius

ZnO-based junction field-effect transistors were fabricated by pulsed-laser deposition using room-temperature-deposited amorphous p-type ZnCo2O4 as heterojunction gate on top of a n-ZnO channel layer. A channel mobility of 8.4 cm2/(Vs), current on/off ratio of 1.3 ×107, and a subthreshold swing of 91 mV/dec were achieved for a transistor with a 40 nm thin channel layer. The devices are normally on and show excellent bias-stress stability, exhibiting a negligible threshold-voltage shift. Elevated temperatures up to 150°C changed the device performance slightly, but the transistor remains fully operative.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 5 )

Date of Publication:

May 2012

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