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ZnO-based junction field-effect transistors were fabricated by pulsed-laser deposition using room-temperature-deposited amorphous p-type ZnCo2O4 as heterojunction gate on top of a n-ZnO channel layer. A channel mobility of 8.4 cm2/(Vs), current on/off ratio of 1.3 ×107, and a subthreshold swing of 91 mV/dec were achieved for a transistor with a 40 nm thin channel layer. The devices are normally on and show excellent bias-stress stability, exhibiting a negligible threshold-voltage shift. Elevated temperatures up to 150°C changed the device performance slightly, but the transistor remains fully operative.