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The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs

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4 Author(s)
Wang, Xiao-Dong ; Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China ; Hu, Wei-Da ; Chen, Xiao-Shuang ; Lu, Wei

The direct current characteristics of AlGaN/GaN double-channel HEMTs (DC-HEMTs) are investigated by using 2-D numerical simulations. The output characteristics have been predicted with the drift-diffusion, thermodynamic, hydrodynamic, and hot-electron models, respectively. The prediction by the hydrodynamic model is in good agreement with the experiment. It is demonstrated that the hot-electron effect makes a negligible contribution to the negative differential conductance (NDC) of an AlGaN/GaN DC-HEMT; instead, the NDC effect is caused by the self-heating effect. The transfer and transconductance characteristics of an AlGaN/GaN DC-HEMT are also discussed in detail. Finally, a new In0.18Al0.82N /GaN/AlGaN/GaN DC-HEMT structure is proposed for optimizing AlGaN/GaN DC-HEMTs.

Published in:

Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 5 )

Date of Publication:

May 2012

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