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A dry transfer process for single-walled carbon nanotubes allows for suspended, ultraclean, and hysteresis-free nanotube field-effect transistors on micro-actuated electrodes without exposing the device die to elevated nanotube growth temperatures. Nanotubes are grown on a separate die, between the arms of a fork structure, and are subsequently transferred onto receiving electrodes of a device die. The device die is maintained at room-temperature; and thus, it can in principle contain temperature-sensitive readout circuitry. The liquid-free, room-temperature transfer is performed under light microscopy observation, while placement is detected by monitoring the current through the device electrodes. In contrast to manipulation under electron beam observation, electron-beam-induced carbonaceous contamination is prevented. Moreover, pre-selection of nanotubes by Raman spectroscopy is rendered possible, avoiding any contamination of the nanomaterial during selection and integration into NEMS.
Date of Conference: Jan. 29 2012-Feb. 2 2012