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Potential Design for Electron Transmission in Semiconductor Devices

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2 Author(s)
Jun Zhang ; Key Lab. of Syst. Control & Inf. Process., Shanghai Jiao Tong Univ., Shanghai, China ; Kosut, R.

In this brief, we discuss the design of electrostatic potential profile to achieve a desired electron transmission coefficient versus bias voltage characteristics in nanoscale semiconductor devices. This is a common problem in the design of many new electronic devices. We formulate it as a constrained optimization problem, and solve it by sequential linear programming. We further investigate the robust design of potential that is tolerant to noise, disturbance, and parameter uncertainty in the device.

Published in:

Control Systems Technology, IEEE Transactions on  (Volume:21 ,  Issue: 3 )