By Topic

Preparation and Low-Temperature Sintering of Cu Nanoparticles for High-Power Devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Krishnan, S. ; Dept. of Mech. Eng., Univ. of Malaya, Kuala Lumpur, Malaysia ; Haseeb, A.S.M.A. ; Johan, M.R.

One of the fundamental requirements for high-temperature electronic packaging is reliable silicon attach with low and stable electrical resistance. This paper presents a study conducted on Cu nanoparticles as an alternative lead-free interconnect material for high-temperature applications. Cu nanoparticles were prepared using pulsed wire evaporation technique in water medium. Pure Cu nanoparticles without any organic mixture were used in this paper. An economical approach to extract the nanoparticles from water was established. In situ Cu nanoparticles oxide reduction was successfully done using forming gas (N2-5%H2). Cross-section analysis on bonded interface shows onset of Cu nanoparticles sintering at 400°C. We successfully demonstrated the possibilities of using Cu nanoparticles as silicon die attach material for high-temperature electronic devices.

Published in:

Components, Packaging and Manufacturing Technology, IEEE Transactions on  (Volume:2 ,  Issue: 4 )