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A Correlative Analysis Between Characteristics of FinFETs and SRAM Performance

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9 Author(s)
Endo, K. ; Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan ; O'uchi, S. ; Ishikawa, Y. ; Yongxun Liu
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A correlation between the characteristics of the 30-nm LG fin-shaped field-effect transistors and the static random-access memory performance is precisely studied. By investigating an effect of the Vth variation to the static noise margin (SNM) variation of two different memory states of the storage node, it is revealed that the Vth variations of the pull-up, pull-down, and pass-gate transistors correlate with the SNM. Moreover, the contribution and the severity of each transistor variation to σSNM are clarified.

Published in:

Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 5 )

Date of Publication:

May 2012

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