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High Temperature Stable Operation of 1.3- \mu m Quantum-Dot Laser Integrated With Single-Mode Tapered Si _{3} N _{4} Waveguide

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4 Author(s)
Chi-Sen Lee ; Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA ; Frost, T. ; Wei Guo ; Bhattacharya, Pallab

A photonic-integrated circuit consisting of a 1.3-μm quantum-dot laser and Si3N4 single-mode tapered waveguide, suitable for high temperature operation, is demonstrated. The laser active region incorporates p-doping, tunnel injection, and a superlattice barrier. The temperature dependence of the threshold current of the discrete laser is characterized by T0 ~ ∞ in the temperature range 5°C ≤ T ≤ 60°C and 90 K in the range 60°C <; T ≤ 85°C. The Si3N4 tapered waveguide is monolithically integrated with a 2.1-μm coupling groove. The insertion loss of a 160-μm waveguide in the integrated circuit is 2.47 dB.

Published in:

Photonics Technology Letters, IEEE  (Volume:24 ,  Issue: 11 )