Referenced Items are not available for this document.
Simulation Study of Dominant Statistical Variability Sources in 32-nm High- 
/Metal Gate CMOS
Simulation Study of Dominant Statistical Variability Sources in 32-nm High-
Comprehensive 3-D simulations have been carried out and compared with experimental data highlighting the dominant sources of statistical variability in 32-nm high-κ/metal gate MOSFET technology. The statistical variability sources include random discrete dopants, line edge roughness, and metal gate granularity. Their relative importance is highlighted in the numerical simulations. Excellent agreement is achieved between the simulated and measured standard deviation of the threshold voltage.
Published in:
Electron Device Letters, IEEE
(Volume:33
,
Issue:
5
)
Date of Publication: May 2012
- Page(s):
- 643 - 645
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 12692168
- Digital Object Identifier :
- 10.1109/LED.2012.2188268
- Product Type:
- Journals & Magazines
- Date of Publication :
- 13 March 2012
- Date of Current Version :
- 20 April 2012
- Issue Date :
- May 2012
- Sponsored by :
- IEEE Electron Devices Society
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