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Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane

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10 Author(s)
Hwang, Wan Sik ; Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 ; Tahy, Kristof ; Nyakiti, Luke O. ; Wheeler, Virginia D.
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Top-gated epitaxial graphene nanoribbon (EGNR) field effect transistors (FETs) were fabricated on epitaxial graphene substrates which demonstrated the opening of a substantial bandgap. Hydrogen silsesquioxane (HSQ) was used for the patterning of 10 nm size linewidth as well as a seed layer for atomic layer deposition (ALD) of a high-k dielectric aluminum oxide (Al2O3). It is found that the resolution of the patterning is affected by the development temperature, electron beam dose, and substrate materials. The chosen gate stack of HSQ followed by Al2O3 ALD permits stable device performance and enables the demonstration of the EGNR-FET.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:30 ,  Issue: 3 )