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In-Pixel Source Follower Transistor RTS Noise Behavior Under Ionizing Radiation in CMOS Image Sensors

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3 Author(s)
Martin-Gonthier, P. ; CIMI Integrated Image Sensor Lab., Univ. de Toulouse, Toulouse, France ; Goiffon, V. ; Magnan, P.

This paper presents temporal noise measurement results for several total ionizing dose (TID) steps up to 2.19 Mrad of an image sensor designed with a 0.18-μm CMOS image sensor process. The noise measurements are focused on the random telegraph signal (RTS) noise due to the in-pixel source follower transistor of the sensor readout chain inducing noisy pixels. Results show no significant RTS noise degradation up to 300 krad of TID. Beyond this TID step, a limited RTS noise degradation is observed, and for the 2.19-Mrad step, an additional increase of total noise, including thermal, 1/f, and RTS noises, is noted. Noisy pixels have been studied for high TIDs, and three cases have been observed: 1) no change on RTS behavior; 2) creation of RTS behavior; and 3) modifications of RTS behavior.

Published in:

Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 6 )

Date of Publication:

June 2012

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