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P+Ge1-xSnx is a promising source and drain (S/D) stressor material for Ge p-MOSFETs, and an S/D material in Ge1-xSnx channel p-MOSFETs. In this paper, we investigate the dopant segregation (DS) effects in the stanogermanidation of p+Ge0.947Sn0.053 (boron-doped). A study comparing the contact resistance RC of nickel stanogermanide [Ni(Ge1-xSnx) or Ni(GeSn)] contact on p+Ge1-xSnx and nickel germanide (NiGe) contact on p+ Ge was performed. A more pronounced DS effect is achieved during the stanogermanidation in comparison with the NiGe/p+Ge control. RC is 44% lower in the Ni(Ge1-x Snx)/p+GeSn structure as compared to the NiGe/p+Ge control. The reduced RC is attributed to a more significant DS effect and the lower bandgap of Ge1-xSnx as compared with Ge.
Date of Publication: May 2012