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Thin films of tin sulphides (SnxSy) were deposited on glass substrates by spray pyrolysis technique using precursor solutions of SnCl2.2H2O and thiourea and InC l3 at different substrate temperatures that vary in the range of 275-375°C. The physical properties of these films were characterized by using X- ray diffraction, Field Emission Scanning Electron Microscope, UV-Visible Spectrophotometer and Photoluminescence. The XRD pattern revealed that the undoped and doped films had preferred orientation along (002) plane with hexagonal structure. FESEM micrographs had shown that morphologies of the films were changed with doping of indium. The direct energy band gap value of undoped and indium doped SnS2 thin films were found to be 2.7 eV and 2.5 eV respectively. Photoluminescence had shown the shift in the band towards the longer wavelength.