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Thin films of yttria stabilized zirconia corresponding to 0-12 mol % yttria were synthesized by combustion chemical vapour deposition technique in the temperature range of 900 - 1100°C on quartz substrate. Zirconium (IV) 2-ethyhexanoate and yttrium (III) 2-ethylhexanoate were used as the precursors. Cubic (c) fluorite structures of YSZ were formed at 8 and 12 % yttria addition. Monoclinic (m) and tetragonal (t) structures are observed for pure and 4% yttria doped zirconia, respectively. Coagulation of clusters of nano crystallites (~100 nm) to large grains resulting in relatively dense film was observed with increase in deposition temperature form 900 to 1100°C. The increase in doping concentration of yttria led to micro-cracking and eventual buckling of the film. Structural disorder induced by oxygen vacancy in the YSZ films was confirmed using laser Raman spectroscopy.