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Zinc diffusion process for GaAs0.6P0.4 red light emitting diode fabrication in an undergraduate laboratory

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2 Author(s)
Lawrence, D.J. ; Integrated Sci. & Technol. Program, James Madison Univ., Harrisonburg, VA, USA ; Heineman, D.L.

The formation of p+-n junctions by zinc diffusion into n-type GaAs0.6P0.4 wafers is described. Processes developed in this work allow experience with chemical vapor deposition and the fabrication of red LEDs in an undergraduate laboratory with minimal student exposure to hazardous chemicals. Electrical and optical characteristics of the resulting LEDs are presented

Published in:

University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial

Date of Conference:

20-23 Jul 1997

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