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Design of a 270ps-access 7-transistor/2-magnetic-tunnel-junction cell circuit for a high-speed-search nonvolatile ternary content-addressable memory

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6 Author(s)
Matsunaga, S. ; Center for Spintronics Integrated Systems, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan ; Katsumata, Akira ; Natsui, M. ; Endoh, T.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3677875 

A novel 7-transistor/2-magnetic-tunnel-junction (7 T-2MTJ) cell circuit is proposed for a high-speed and compact nonvolatile ternary content-addressable memory (TCAM). Since critical path for switching in the TCAM cell circuit, which determines the performance of the TCAM, is only a single MOS transistor, switching delay of the TCAM word circuit is minimized. As a result, 270 ps of switching delay in 144-bit TCAM word circuit is achieved under a 90 nm CMOS/MTJ technology with magneto-resistance ratio of 100%, which is about two times faster than a conventional CMOS-based TCAM.

Published in:

Journal of Applied Physics  (Volume:111 ,  Issue: 7 )

Date of Publication:

Apr 2012

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