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Patterned oxide semiconductor by electrohydrodynamic jet printing for transparent thin film transistors

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8 Author(s)
Lee, Sangkyu ; Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, South Korea ; Kim, Jeonghyun ; Choi, Junghyun ; Park, Hyunjung
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This paper explores transport in transparent thin film transistors formed using a liquid precursor to indium zinc oxide, delivered to target substrates by electrohydrodynamic jet (e-jet) printing. Under optimized conditions, we observe field effect mobilities as high as 32 cm2V-1s-1, with on/off current ratios of 103 and threshold voltages of 2 V. These results provide evidence that material manipulated in fine-jet, electric field induced liquid flows can yield semiconductor devices without any adverse effects of residual charge or unintentional doping. E-jet printing methods provide levels of resolution (∼1.5 μm) that provide a path to printed transistors with small critical dimensions.

Published in:

Applied Physics Letters  (Volume:100 ,  Issue: 10 )

Date of Publication:

Mar 2012

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