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Radiation Effects in Si-NW GAA FET and CMOS Inverter: A TCAD Simulation Study

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6 Author(s)
Kaushal, G. ; Dept. of Electron. & Comput. Eng., Indian Inst. of Technol. Roorkee, Roorkee, India ; Rathod, S.S. ; Maheshwaram, S. ; Manhas, S.K.
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In this brief, we have analyzed the response of silicon-nanowire (Si-NW) gate-all-around (GAA) field-effect transistor to total ionizing dose (TID) effects and assessed the impact of single-event effects (SEEs) in simple inverter circuit built from such devices. The analysis of radiation effects is carried out with 3-D technology computer-aided design simulations. Reliability of n-channel and p-channel Si-NW MOSFET is investigated for TID effects with gamma ray exposure. The transient effects at the device level are studied for alpha particle and heavy-ion strikes. It is found that Si-NW MOSFET is inherently hardened to TID effects. This result is in concordance with the earlier reported experimental results. However, we found that Si-NW CMOS inverter is not as tolerant to SEE, as Si-NW MOSFET is to TID. This study highlights the need for radiation-hardened Si-NW FET circuits against SEE.

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Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 5 )