Notification:
We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Radiation Effects in Si-NW GAA FET and CMOS Inverter: A TCAD Simulation Study

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Kaushal, G. ; Dept. of Electron. & Comput. Eng., Indian Inst. of Technol. Roorkee, Roorkee, India ; Rathod, S.S. ; Maheshwaram, S. ; Manhas, S.K.
more authors

In this brief, we have analyzed the response of silicon-nanowire (Si-NW) gate-all-around (GAA) field-effect transistor to total ionizing dose (TID) effects and assessed the impact of single-event effects (SEEs) in simple inverter circuit built from such devices. The analysis of radiation effects is carried out with 3-D technology computer-aided design simulations. Reliability of n-channel and p-channel Si-NW MOSFET is investigated for TID effects with gamma ray exposure. The transient effects at the device level are studied for alpha particle and heavy-ion strikes. It is found that Si-NW MOSFET is inherently hardened to TID effects. This result is in concordance with the earlier reported experimental results. However, we found that Si-NW CMOS inverter is not as tolerant to SEE, as Si-NW MOSFET is to TID. This study highlights the need for radiation-hardened Si-NW FET circuits against SEE.

Published in:

Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 5 )