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A novel one transistor and one diode (1T-1D) dynamic random access memory cell for embedded applications is proposed. This memory cell consists of a floating-gate (FG) MOSFET and a gated diode. The anode of the diode is connected to the FG, so that the threshold voltage of the FG MOSFET can be modulated by the current through the diode. In this paper, basic device operations, speed, retention, and disturb performance are investigated using Silvaco technology computer-aided design simulation tools. The process compatibility is also investigated by integrating the memory array and specific sense amplifier.