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Physical Insight Toward Heat Transport and an Improved Electrothermal Modeling Framework for FinFET Architectures

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7 Author(s)
Shrivastava, M. ; Intel Mobile Commun. Gmbh, Munich, Germany ; Agrawal, M. ; Mahajan, S. ; Gossner, H.
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We report on the thermal failure of fin-shaped field-effect transistor (FinFET) devices under the normal operating condition. Pre- and post failure characteristics are investigated. A detailed physical insight on the lattice heating and heat flux in a 3-D front end of the line and complex back end of line-of a logic circuit network-is given for bulk/silicon-on-insulator (SOI) FinFET and extremely thin SOI devices using 3-D TCAD. Moreover, the self-heating behavior of both the planar and nonplanar devices is compared. Even bulk FinFET shows critical self-heating. Layout, device, and technology design guidelines (based on complex 3-D TCAD) are given for a robust on-chip thermal management. Finally, an improved framework is proposed for an accurate electrothermal modeling of various FinFET device architectures by taking into account all major heat flux paths.

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Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 5 )