By Topic

A study on the properties and fabrication of BaTiO3 thin films by the RF sputtering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ki-Won Ryu ; Yeojoo Tech. Coll., Kyunggi, South Korea ; Seon-Gi Bae ; Young-Hie Lee

BaTiO3 thin films were prepared on Pt(100)/SiO2 /Si(100) substrates by RF sputtering, whose structural, crystallographic, and electrical properties were examined according to the deposition conditions and annealing temperatures. The optimal Ar/O 2 gas flow rate, sputtering pressure, RF power and annealing temperature were 4/1, 12[mTorr], 120[W] and 650[°C] for 1[hr], respectively. From the results of X-ray diffraction (XRD) and D-E hysteresis characteristics, BaTiO3 thin films deposited at the optimal conditions showed a ferroelectric phase. The growth rate of deposited film was about 0.75[Å/sec], and the dielectric constant and dielectric loss were about 683 and 0.05, respectively

Published in:

Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on  (Volume:2 )

Date of Conference:

25 -30 May 1997