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This letter proposes a novel atmospheric pressure plasma jet (APPJ) method for indium-gallium-zinc-oxide (IGZO) deposition and use of the plasma-enhanced atomic layer deposition (PE-ALD) Al2O3 as gate dielectric. A nonvacuum and simple APPJ system was demonstrated for channel material deposition. High-transmittance nanocrystalline IGZO thin films were obtained. Excellent electrical characteristics were achieved, including a low VT of 0.71 V, a small subthreshold swing of 276 mV/dec, a mobility of 8.39 cm2/(V·s), and a large Ion/Ioff ratio of 1 ×108.