Referenced Items are not available for this document.
This letter describes an avalanche photodiode (APD) fabricated in a 0.5-μm CMOS process. In Geiger mode, the APD had an area-normalized dark count rate as low as 2 Hz/μm2 at room temperature. Its signal-to-noise ratio (SNR) increased by an order of magnitude as a result of perimeter field gating. We demonstrate that under high-illumination conditions, perimeter field gating maximizes SNR, whereas under low-light conditions, it maximizes sensitivity.
Published in:
Electron Device Letters, IEEE
(Volume:33
,
Issue:
4
)
Date of Publication: April 2012
- Page(s):
- 570 - 572
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 12617700
- Digital Object Identifier :
- 10.1109/LED.2012.2186112
- Product Type:
- Journals & Magazines
- Date of Publication :
- 07 March 2012
- Date of Current Version :
- 22 March 2012
- Issue Date :
- April 2012
- Sponsored by :
- IEEE Electron Devices Society
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