Tunnel field-effect transistor heterojunction band alignment by internal photoemission spectroscopy

Formats	Non-Member	Member
PDF	$31	$31

Formats

Non-Member

Member

PDF

$31

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3692589

The electron energy band alignment of a metal-oxide-semiconductor tunnel field-effect transistor heterojunction, W/Al2O3/InGaAs/InAs/InP, is determined by internal photoemission spectroscopy. At the oxide flat-band condition, the barrier height from the top of the InGaAs/InAs valence band and the top of the InP valence band to the bottom of the Al2O3 conduction band is determined to be 3.5 and 2.8 eV, respectively. The simulated energy band diagram of the heterostructure is shown to be consistent with the measured band alignments if an equivalent positive charge of 6.0 × 10¹²cm^-2 is present at the Al2O3/InGaAs. This interface charge is in agreement with previously reported capacitance-voltage measurements.

Published in:
Applied Physics Letters (Volume:100 , Issue: 10 )

Date of Publication: Mar 2012

Page(s):: 102104 - 102104-4
ISSN :: 0003-6951
Digital Object Identifier :: 10.1063/1.3692589
Product Type:: Journals & Magazines

Date of Current Version :: 09 March 2012
Issue Date :: Mar 2012

Author(s)

Zhang, Qin
Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
Guangle Zhou ; Xing, Huili G. ; Seabaugh, Alan C. ; Xu, Kun ; Sio, Hong ; Kirillov, Oleg A. ; Richter, C.A. ; Nguyen, N.V.