By Topic

Ga Composition Dictates Macroscopic Photovoltaic and Nanoscopic Electrical Characteristics of Cu(In _{1-X} Ga _X )Se _2 Thin Films via Grain-Boundary-Type Inversion

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Wenjie Li ; Dept. of Mater. & Interfaces, Weizmann Inst. of Sci., Rehovot, Israel ; Cohen, Sidney R. ; Gartsman, K. ; Cahen, D.

The photovoltaic performance of solar cells, based on a Cu(In1-XGaX)Se2 (CIGS) absorber layer, is directly correlated with Ga composition. We have used scanning capacitance microscopy and conducting probe atomic force microscopy (CP-AFM) to provide microscopic electrical characterization of CIGS films with different Ga content. We found p- to n-type inversion at grain boundaries of the polycrystalline CIGS film, especially for Ga-poor compositions. The fraction of grain boundaries undergoing inversion dramatically decreased for Ga compositions above x = 0.32, the composition corresponding to a sharp efficiency drop of the complete cells. CP-AFM measurements showed a marked current drop at grain boundaries as the Ga composition rose above x = 0.32.

Published in:

Photovoltaics, IEEE Journal of  (Volume:2 ,  Issue: 2 )