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Effect of substrate strain on critical dimensions of highly lattice mismatched defect-free nanorods

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3 Author(s)
Sburlan, Suzana ; Compound Semiconductor Laboratory, Department of Electrical Engineering, Electrophysics, University of Southern California, Los Angeles, California 90089-0243, USA ; Nakano, Aiichiro ; Dapkus, P.Daniel

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3688288 

Free-standing semiconductor nanorods grown on lattice-mismatched substrates have become of interest as novel devices, including solar cells. Here, we study the effect of substrate strain on the critical diameter for defect-free growth of free-standing nanorods using continuum elasticity theory. Unlike a thin film, nanorods release strain by relaxing in the lateral direction. We find that substrate relaxation is crucial for defect-free growth of InAs nanorods fabricated on GaAs. The calculation results show that below a critical diameter, the nanorods can grow to infinite length without emitting dislocations. Our findings lend support to the recent experimental efforts to grow defect-free arrays of nanorods providing improved absorption efficiency for next-generation solar cell technology.

Published in:

Journal of Applied Physics  (Volume:111 ,  Issue: 5 )

Date of Publication:

Mar 2012

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