Yield enhancement for 3D-stacked ICs: Recent advances and challenges

Three-dimensional (3D) integrated circuits (ICs) that stack multiple dies vertically using through-silicon vias (TSVs) have gained wide interests of the semiconductor industry. The shift towards volume production of 3D-stacked ICs, however, requires their manufacturing yield to be commercially viable. Various techniques have been presented in the literature to address this important problem, including pre-bond testing techniques to tackle the “known good die” problem, TSV redundancy designs to provide defect-tolerance, and wafter/die matching solutions to improve the overall stack yield. In this paper, we survey recent advances in this filed and point out challenges to be resolved in the future.