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Three-dimensional (3D) integrated circuits (ICs) that stack multiple dies vertically using through-silicon vias (TSVs) have gained wide interests of the semiconductor industry. The shift towards volume production of 3D-stacked ICs, however, requires their manufacturing yield to be commercially viable. Various techniques have been presented in the literature to address this important problem, including pre-bond testing techniques to tackle the “known good die” problem, TSV redundancy designs to provide defect-tolerance, and wafter/die matching solutions to improve the overall stack yield. In this paper, we survey recent advances in this filed and point out challenges to be resolved in the future.
Date of Conference: Jan. 30 2012-Feb. 2 2012