By Topic

GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
D. H. Zhang ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore ; C. Y. Li ; S. F. Yoon ; A. Raman

The influence of substrate misorientation on the quality of the active region with low AlAs portion barrier layers and the performance of GaAs/AlGaAs graded index separate-confinement triple-quantum-well lasers grown under nonoptimal conditions have been investigated. It is found that the threshold current could be reduced from 32.5 mA to 15.7 mA by tilting the substrate 6° and the high quality lasers show a characteristic temperature as high as 260°C, indicating a high output stability. The luminescence results reveal that carbon impurity, like oxygen, could also be incorporated and trapped at AlGaAs/GaAs interfaces during growth and cause roughness, resulting in excessive scattering and loss and thus a high threshold current. Substrate misorientation for 6° toward ⟨111⟩A could reduce the carbon impurity to an unobservable level

Published in:

Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on

Date of Conference:

26-28 Nov 1996