By Topic

High field domain formation and current-voltage hysteresis in selectively doped GaAs/AlGaAs multiple-quantum-well structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Yoon, S.F. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore ; Radhakrishnan, K. ; Zhang, D.H. ; Han, Z.Y.

We have studied the sequential tunneling of electrons in selectively doped GaAs/AlGaAs tight-binding multiple-quantum-wells (MQWs) using two structures with different doping profiles, one with Si doping in the AlGaAs barriers and other, with Si doping in the GaAs wells. In both the cases, the current-voltage (I-V) measurements showed two series of current oscillations which persisted up 200 K. The I-V characteristics also showed a hysteresis effect at increasing and decreasing voltage sweep. The voltage separations between the adjacent current oscillations in the I-V characteristics of the structures with ohmic and Schottky contact metallization give a good measure of the energy difference between the excited states and the ground state in the quantum-well, with good agreement with theoretical calculations. The process of sequential electron tunneling through the MQW structures is discussed in terms of the creation and extension of high-field domains (HFDs) due to the applied bias

Published in:

Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on

Date of Conference:

26-28 Nov 1996