High voltage characteristics of polycrystalline silicon conductivity modulated thin film transistors

This paper presents the high voltage characteristics of the conductivity modulated thin film transistor (CMTFT). The effects of the offset region doping on the performance of the CMTFT at high voltage was investigated. The CMTFT devices with a breakdown voltage of 100 V are obtained experimentally. It is shown that the offset region doping increases the current drive and reduces the forward voltage drop of the high voltage CMTFT at the expense of a small degradation in the leakage current and breakdown voltage. Better trade-off between current drive and leakage current can be obtained by optimizing the injection efficiency of the p/sup +/ anode of the transistor.