Referenced Items are not available for this document.
This paper presents the high voltage characteristics of the conductivity modulated thin film transistor (CMTFT). The effects of the offset region doping on the performance of the CMTFT at high voltage was investigated. The CMTFT devices with a breakdown voltage of 100 V are obtained experimentally. It is shown that the offset region doping increases the current drive and reduces the forward voltage drop of the high voltage CMTFT at the expense of a small degradation in the leakage current and breakdown voltage. Better trade-off between current drive and leakage current can be obtained by optimizing the injection efficiency of the p+ anode of the transistor
Published in:
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Date of Conference: 26-28 Nov 1996
- Page(s):
- 78 - 81
- Meeting Date :
- 26 Nov 1996-28 Nov 1996
- Print ISBN:
- 0-7803-3388-8
- INSPEC Accession Number:
- 5760447
- Conference Location :
- Penang
- Digital Object Identifier :
- 10.1109/SMELEC.1996.616456
- Product Type:
- Conference Publications
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