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SOI SJ high voltage device with linear variable doping interface thin silicon layer

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5 Author(s)
Wu, L.J. ; State key Lab. of Electron. Thin Films & Integrated Devices, UESTC, Chengdu, China ; Zhang, W.T. ; Qiao, M. ; Zhang, B.
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A novel high concentration linear variable doping interface thin silicon layer (TSL) silicon-on-insulator (SOI) super junction (SJ) LDMOS is proposed. The design of the linear variable doping can deplete the high drift concentration. The proposed structure uses a TSL to achieve charge balance and eliminate substrate-assisted depletion effect. The dielectric electric field (EI) and the breakdown voltage (BV) of the TSL SOI SJ are 530 V/ m and 552 V with 30 m length drift region and 1 m-thick dielectric layer, respectively, and the specific on-resistance (Ron, sp) is 0.03403 cm2 and FOM (FOM=BV2/Ron,sp) is 8.95 MW/cm2, when gate voltage is 5 V.

Published in:

Electronics Letters  (Volume:48 ,  Issue: 5 )