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Fabrication of In0.53Ga0.47AsN0.01/AlAs0.56Sb0.44 resonant tunnelling diodes grown on inp by molecular beam epitaxy

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2 Author(s)
Y. Kawamura ; Graduate School of Engineering, Osaka Prefecture University, 1-2 Gakuen-cho, Naka-ku Sakai, Osaka 599-8570, Japan ; K. Mitsuyoshi

An In0.53Ga0.47AsN0.01/AlAs0.56Sb0.44 resonant tunnelling diode (RTD) has been fabricated by molecular beam epitaxy on InP substrates for the first time. A clear negative differential resistance (NDR) characteristic was observed at room temperature, where the peak/valley (P/V) ratio is as high as 19.6. This result indicates that the use of an InGaAsN layer in the RTD structure is very effective on obtaining an NDR characteristic with high P/V ratio.

Published in:

Electronics Letters  (Volume:48 ,  Issue: 5 )