By Topic

Effect of SiGe channel on pFET variability in 32 nm technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
X. Yuan ; IBM Microelectronics Division, International Semiconductor Development Alliance, 2070 Route 52, Hopewell Junction, NY 12533, USA ; Q. Zhang ; H. Tran ; S. Fox
more authors

The effect of a silicon germanium (SiGe) channel on pFET threshold voltage (VTH) mismatch in 32 nm high-K/metal-gate (HKMG) process is characterised. Additional variability is observed in the SiGe-channel pFET as compared with the traditional pFET with a silicon (Si) channel. Despite the extra VTH mismatch introduced by the SiGe channel, the traditional mismatch figure of merit from a Pelgrom plot (AVT) continuously scales down as technology advances from poly/SiON to HKMG process.

Published in:

Electronics Letters  (Volume:48 ,  Issue: 5 )