By Topic

Cu Single Damascene Integration of an Organic Nonporous Ultralow- k Fluorocarbon Dielectric Deposited by Microwave-Excited Plasma-Enhanced CVD

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Xun Gu ; Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan ; Nemoto, T. ; Tomita, Y. ; Teramoto, Akinobu
more authors

An integration of an organic nonporous ultralow-k dielectric fluorocarbon (k = 2.2) deposited by microwave-excited plasma-enhanced CVD into Cu single damascene interconnects is developed in this paper. The changing of the chemical structure of the fluorocarbon was found after dry etching, which resulted in the degradation of electrical properties during the postetching cleaning process. A nitrogen plasma treatment was applied as a postetching process to minimize damage introduction to the fluorocarbon in the following damascene fabrication processes, and a line-to-line leakage current was significantly improved without the variance of effective dielectric constant (keff = 2.5) in Cu lines. In a thermal stress test at 350°C after Cu-interconnect fabrication, no degradation of the Cu line resistance and line-to-line capacitance was found, which indicated a sufficient thermal stability of the fluorocarbon film in Cu single damascene interconnects. Therefore, this robust organic nonporous fluorocarbon film is considered as one of the promising candidates of ultralow-k dielectrics for high-performance Cu interconnects in the future.

Published in:

Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 5 )