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Planar InAs/AlSb HEMTs With Ion-Implanted Isolation

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6 Author(s)
Moschetti, G. ; Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden ; Nilsson, P.-A. ; Hallen, A. ; Desplanque, L.
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The fabrication and performance of planar InAs/AlSb high-electron-mobility transistors (HEMTs) based on ion-implantation isolation technology are reported. Ar atoms have been implanted at an energy of 100 keV and with a dose of 2 ×1015 cm-2 in order to induce device isolation. The InAs/AlSb HEMT exhibited a maximum drain current of 900 mA/mm, a peak transconductance of 1180 mS/mm, and an fT/fmax ratio of 210 GHz/180 GHz at a low drain bias of 0.3 V. The combination of excellent stability against oxidation with the high device isolation demonstrated by the implantation technique can dramatically improve the suitability of InAs/AlSb HEMTs for high-frequency and ultralow-power MMIC applications.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 4 )

Date of Publication:

April 2012

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