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RF Planar Inductor Electrical Performances on n-Type Porous 4H Silicon Carbide

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5 Author(s)
Gaël Gautier ; Universite de Tours, Tours, France ; M. Capelle ; J. Billoue ; F. Cayrel
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For the first time, inductors were integrated on porous silicon carbide to study the effect of this substrate on radio-frequency (RF) performances. n-Type heavily doped 4H-SiC substrates were anodized in an HF-based electrolyte to produce 6- and 15-μm-thick porous layers. An improvement of the quality factor was demonstrated on porous SiC with regard to SiC bulk. This promising result shows the decrease of substrate losses at the high frequencies with the porous SiC substrate. Thus, porous SiC could have an interest for the integration of RF power devices.

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IEEE Electron Device Letters  (Volume:33 ,  Issue: 4 )