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Ultrathin-body InAsSb-on-insulator n-type field-effect transistors (FETs) with ultrahigh electron mobilities are reported. The devices are obtained by the layer transfer of ultrathin InAs0.7Sb0.3 layers (thickness of 7-17 nm) onto Si/SiO2 substrates. InAsSb-on-insulator FETs exhibit an effective mobility of ~ 3400 cm2/V·s for a body thickness of 7 nm, which represents ~ 2× enhancement over InAs devices of similar thickness. The top-gated FETs deliver an intrinsic transconductance of ~ 0.56 mS/μm (gate length of ~ 500 nm) at VDS = 0.5 V with ION/IOFF of 102-103. These results demonstrate the utility of the transfer process for obtaining high-mobility n-FETs on Si substrates by using mixed anion arsenide-antimonide as the active channel material.