By Topic

Ultrathin-Body High-Mobility InAsSb-on-Insulator Field-Effect Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Fang, Hui ; Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA ; Chuang, Steven ; Takei, Kuniharu ; Ha Sul Kim
more authors

Ultrathin-body InAsSb-on-insulator n-type field-effect transistors (FETs) with ultrahigh electron mobilities are reported. The devices are obtained by the layer transfer of ultrathin InAs0.7Sb0.3 layers (thickness of 7-17 nm) onto Si/SiO2 substrates. InAsSb-on-insulator FETs exhibit an effective mobility of ~ 3400 cm2/V·s for a body thickness of 7 nm, which represents ~ 2× enhancement over InAs devices of similar thickness. The top-gated FETs deliver an intrinsic transconductance of ~ 0.56 mS/μm (gate length of ~ 500 nm) at VDS = 0.5 V with ION/IOFF of 102-103. These results demonstrate the utility of the transfer process for obtaining high-mobility n-FETs on Si substrates by using mixed anion arsenide-antimonide as the active channel material.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 4 )