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Dual-band millimeter-wave VCO with embedded RF-MEMS switch module in BiCMOS technology

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6 Author(s)
Gang Liu ; EBS, Ulm University, Albert-Einstein-Allee 45, 89075 Ulm, Germany ; Mehmet Kaynak ; Tatyana Purtova ; A. Çagğri Ulusoy
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This paper presents a dual-band millimeter-wave VCO utilizing RF-MEMS switches fully integrated into a standard BiCMOS process. The switch and associated transmission line form a reconfigurable inductor in the VCO core. Depending on the state of the switch, the VCO frequency can be tuned either from 48 to 52 GHz, or from 64 to 72 GHz. The VCO provides both fundamental and frequency-divided (divide by 64) outputs, with integrated frequency dividers. The fundamental output power is 4/5 dBm and the phase noise at 1 MHz offset is -84/-86 dBc/Hz for the lower/upper bands. To the authors' knowledge, this is the first millimeter-wave, dual-band VCO with fully integrated RF-MEMS switches.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on

Date of Conference:

16-18 Jan. 2012