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Loss mechanisms and quality factor improvement for inductors in high-resistivity SOI processes

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1 Author(s)
William B. Kuhn ; Department of Electrical and Computer Engineering, Kansas State University, Manhattan, KS 66506, USA

Silicon-on-insulator processes have the potential to realize high-quality factors in spiral inductors, but only if the loss mechanisms involved are clearly understood. Partially-depleted SOI (PD-SOI) processes must address losses in the semiconducting Silicon layer below the spiral inductor turns, even when high-resistivity substrates are employed. These losses are illustrated with a simplified lumped-element model and an array of inductors with different materials below is measured to confirm the theory. Q values achieved are up to 19 in the popular frequency range of 1 to 6 GHz without the use of expensive thick-metal in the process.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on

Date of Conference:

16-18 Jan. 2012