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A 62 GHz reflectometer for biomedical sensor readout in SiGe BiCMOS technology

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5 Author(s)
Laemmle, B. ; Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany ; Schmalz, K. ; Scheytt, C. ; Kissinger, D.
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In this publication an integrated reflectometer in SiGe BiCMOS technology for sensor readout at 62 GHz is presented. The circuit includes an oscillator, a six-port reflectometer, and a dummy sensor for verification purposes. The circuit has a bandwidth of 8GHz at a center frequency of 62 GHz. It operates at 3.75V supply voltage and consumes 282 mW. The measurement principle is demonstrated and the scattering parameters of the dummy sensor are compared to measurement of a breakout circuit with a commercially available vector network analyzer. The circuit has been fabricated in a 190-GHz SiGe:C BiCMOS technology and occupies an area of 0.9 mm2.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on

Date of Conference:

16-18 Jan. 2012

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