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An analyzing of anomalous peak in the capacitance-voltage characteristics at Hg/GaN Schottky contact

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11 Author(s)
L. H. Cheng ; School of Electronic Science and Engineering, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, National Laboratory of Solid State Microstructure, Nanjing University, Nanjing, China ; P. Han ; L. Yu ; W. Cheng
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The frequency dependence of capacitance-voltage (C-V) characteristics of Hg/GaN and Hg/InGaN/GaN Schottky contacts are investigated for 1KHz, 10KHz and 1MHz at room temperature. An anomalous peak in the C-V curves of Hg/GaN sample is observed but no peak for the Hg/InGaN/GaN sample occurs. The interface states, series resistance and minority-carrier injection would be the origin of this anomalous peak. The interface states density is calculated through C-V measurement of high and low frequencies, and a four-element circuit model is proposed to determine the series resistance. In addition, energy bind structures are taken into account. The three aspects above are analyzed for both two samples, and the origin of the anomalous peak is attributed to the series resistance and minority-carrier injection rather than the interface states.

Published in:

Optoelectronics and Microelectronics Technology (AISOMT), 2011 Academic International Symposium on

Date of Conference:

12-16 Oct. 2011