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Accurate RTA-Based Nonquasi-Static MOSFET Model for RF and Mixed-Signal Simulations

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4 Author(s)
Zeqin Zhu ; Freescale Semicond. Inc., Tempe, AZ, USA ; Gildenblat, G. ; McAndrew, C.C. ; Ik-Sung Lim

A new relaxation-time-approximation-based nonquasi-static (NQS) MOSFET model, consistent between transient and small-signal simulations, has been developed for surface-potential-based MOSFET compact models. The new model is valid for all regions of operation and is compatible with, and at low frequencies recovers, the quasi-static description of the MOSFET. The model is implemented in two widely used circuit simulators and is tested for speed and convergence. It is verified by comparison with technology computer-aided design simulations and experimental data and by application of a recently developed benchmark test for NQS MOSFET models.

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Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 5 )