Referenced Items are not available for this document.
We observed a threefold increase in light emission power for long-wave infrared (LWIR) light-emitting diode (LED) devices by backside thinning and isolating the individual pixel from others. The proposed technique of backside thinning and isolating bottom emitting LED devices resulted in high yield of devices in an array. The voltage drop of the etched device is lower compared with the unetched device. This newly developed technique of device isolation opens the path to further device performance improvement by using grating and lenslet deposition on an individual LED pixel.
Published in:
Electron Devices, IEEE Transactions on
(Volume:59
,
Issue:
4
)
Date of Publication: April 2012
- Page(s):
- 1209 - 1211
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 12617599
- Digital Object Identifier :
- 10.1109/TED.2012.2185700
- Product Type:
- Journals & Magazines
- Date of Publication :
- 28 February 2012
- Date of Current Version :
- 22 March 2012
- Issue Date :
- April 2012
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
