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Characterization of epitaxial ZnTe layers grown on GaAs substrates by transmission electron microscopy and photoluminescence

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6 Author(s)
Zhang, Fabi ; Synchrotron Light Application Center, Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502, Japan ; Ikoma, Yoshifumi ; Zhang, Jinping ; Xu, Ke
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3688498 

The authors have investigated the effects of a low-temperature ZnTe buffer layer on structural and optical properties of ZnTe epilayers grown on (100) GaAs substrates by transmission electron microscopy and photoluminescence measurements. It has been found that the low-temperature ZnTe buffer layer can reduce the defects such as disordered region in the ZnTe buffer layer and suppress the dislocations at the ZnTe surface region, resulting in the formation of a high quality ZnTe epilayer grown on the low-temperature buffer layer.

Published in:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:30 ,  Issue: 2 )

Date of Publication: Mar 2012

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