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Silicon-on-Insulator Polarization Rotator Based on a Symmetry Breaking Silicon Overlay

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7 Author(s)
Vermeulen, D. ; Dept. of Inf. Technol., Ghent Univ., Ghent, Belgium ; Selvaraja, S. ; Verheyen, P. ; Absil, P.
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We demonstrate a polarization rotator fabricated using a 4 etch-step complementary metal-oxide-semiconductor (CMOS)-compatible process including layer depositions on a silicon-on-insulator wafer. The measured polarization rotation efficiency is over a wavelength range of 80 nm. A robustness investigation shows that the design is compatible with CMOS fabrication capabilities.

Published in:

Photonics Technology Letters, IEEE  (Volume:24 ,  Issue: 6 )

Date of Publication:

March15, 2012

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