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Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications

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7 Author(s)
Moschetti, G. ; Dept. of Microelectron. & Nanosci. (MC2), Chalmers Univ. of Technol., Goteborg, Sweden ; Wadefalk, N. ; Nilsson, P.-A. ; Abbasi, M.
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A cryogenic wideband 4-8 GHz hybrid low-noise amplifier, based on a 110 nm gate length InAs/AlSb HEMT process is presented. At room temperature the three-stage amplifier exhibited a transducer gain of 29 dB and a noise temperature of 150 K with 17.6 mW power consumption. When cooled to 13 K, the amplifier showed a minimum noise temperature of 19 K at a power consumption of 6 mW (66% reduction compared to room temperature). At cryogenic temperature, the optimum drain voltage for best noise performance was reduced from 0.55 V down to 0.3 V, demonstrating the very low-power and low-voltage capabilities of InAs/AlSb HEMT based low-noise amplifiers at cryogenic temperature.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:22 ,  Issue: 3 )

Date of Publication:

March 2012

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