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The effect of a ferromagnetic Gd marker on the effective work function of Fe in contact with Al2O3/Si

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7 Author(s)
Zenkevich, A.V. ; NRNU, Moscow Engineering Physics Institute, 115409, Moscow, Russia ; Matveyev, Yu.A. ; Lebedinskii, Yu.Yu. ; Mantovan, R.
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The effect of a ferromagnetic Gd marker layer on the effective work function (WFeffFe) of Fe in a Fe/ Gd/Al2O3/Si stack has been systematically investigated by hard X-ray photoelectron spectroscopy (HAXPES) and capacitance-voltage measurements. A pronounced change in the band alignment at the buried Fe/Al2O3 interface WFeffFe=4.5/3.7eV is revealed by HAXPES as a function of the Gd marker thickness in the range 0/2.7 nm, in agreement with capacitance-voltage (C-V) data. Interface-sensitive 57Fe conversion-electron Mößbauer spectroscopy performed on Fe/Gd/Al2O3/Si stacks reveals major structural and magnetic changes at the Fe/Gd interface for different Gd thickness, which are correlated with the changes of the Fe/Al2O3 band alignment.

Published in:

Journal of Applied Physics  (Volume:111 ,  Issue: 7 )