Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3688245
Negative-bias-temperature-instability (NBTI) and hot-carrier induced device degradation have been experimentally compared between accumulation mode (AM) p-channel multigate transistors (pMuGFETs) and junctionless (JL) pMuGFET. NBTI degradation is less significant in junctionless pMuGFETs than AM pMuGFETs. The threshold voltage shift is less significant in junctionless transistors than AM transistors. The device simulation shows that the peak of lateral electric field and the impact ionization rate of AM device are larger than those of junctionless devices.